IIT Roorkee Post-Doctoral Fellow Instrumentation 2026

IIT Roorkee Post-Doctoral Fellow Recruitment 2026: Overview

The Institute Instrumentation Centre (IIC) at the Indian Institute of Technology Roorkee (IIT Roorkee) is looking for a Post-Doctoral Fellow for a full-time, two-year research position on the project "Development of GaN-on-Diamond Heterostructures Using Magnetron Sputtered AlN Interfacial Layers for Advanced Electronic Devices". You will work under the mentorship of Prof. Ramesh Chandra of the Instrumentation Centre.

The position suits a physics PhD whose doctoral work was in thin-film fabrication or surface and interface engineering. Hands-on work with RF magnetron sputtering of AlN films and with tools like thin-film XRD, XPS, AFM and spectroscopic ellipsometry will give you a clear edge, as will exposure to AlN/diamond and GaN/AlN/diamond systems. The Centre wants someone driven to produce high-impact publications.

Service Conditions and Caveats

• Temporary position: PDF positions are purely temporary and this one runs full-time for two years.
• Extra academic work: Beyond the project, you will mentor UG and PG students, join research discussions and take on other activities your mentor assigns.
• Quick joining: You are expected to join the Centre as soon as the offer letter is released.
• Student status: Post-Doctoral Fellows are registered as students and can use the library, the computer centre and the available hospital facilities.
• Leave: You earn 2.5 days of leave per completed calendar month; unused leave does not carry forward beyond the calendar year.

Application Submission Notes

Combine all your documents into one PDF file named "Candidate Name_Institute_Year of Ph.D" and email it to head@iic.iitr.ac.in, with a copy to ramesh.chandra@ic.iitr.ac.in. Use the subject line "Application for PDF_Advt. No. IIC/PFD/113", exactly as the notice prints it.

The email is addressed to The Head, Institute Instrumentation Centre, IIT Roorkee, Roorkee 247667, Uttarakhand. Keep your research statement focused on both your past work and your future research plans, since the notice asks for both.

• Carry out research on GaN-on-Diamond heterostructures built with magnetron-sputtered AlN interfacial layers
• Grow and optimise AlN thin films using RF magnetron sputtering
• Characterise films for crystal quality, interface quality, surface morphology and optical properties
• Publish project results in high-impact journals
• Mentor UG and PG students working in the lab
• Take part in research discussions at the Instrumentation Centre