NIT Warangal JRF Recruitment 2026

About This Job

NIT Warangal is hiring 1 Junior Research Fellow (JRF) in the Department of Electronics and Communication Engineering. If you have B.Tech/B.E in Electronics and Communication Engineering, or B.Tech/B.E plus M.Tech/M.E in related ECE research areas, you can apply online through the process mentioned in the notice. The last date to apply is 10 July 2026 at 11:59 pm. Monthly fellowship ranges from Rs. 30,000 + HRA to Rs. 42,000 + HRA, depending on NET/GATE status and project year.

NIT Warangal Junior Research Fellow Recruitment 2026 - 1 Post

National Institute of Technology Warangal (NIT Warangal) has released a JRF notice for an ANRF Inclusivity Research Grant project titled Design and Fabrication of 2D-Material Resistive Random Access Memory (RRAM) for Synaptic and Sensor Applications. The position is temporary and connected to a 3-year research and development project. The selected candidate may also be eligible to register for a Ph.D. degree at NIT Warangal as per institute rules.

Who Can Apply?

Essential Qualification

• For UG and PG route: You need at least 60% aggregate marks or 6.5 CGPA at both UG and PG for GEN/GEN-EWS/OBC-NCL. For SC/ST/PwD, you need at least 55% aggregate marks or 6.0 CGPA at both UG and PG.
• For Bachelor's degree route: You need a Bachelor's degree in Engineering/Technology with at least 7.5/10 CGPA or 70% marks for GEN/GEN-EWS/OBC-NCL. For SC/ST/PwD, you need at least 7.0/10 CGPA or 65% marks.
• Required discipline: B.Tech/B.E or equivalent in Electronics and Communication Engineering with M.Tech/M.E in Electronics and Communication Engineering or equivalent research areas in Microelectronics, VLSI, Integrated Circuits and Systems, Fabrication, or Characterization.
• Alternate route: B.Tech/B.E or equivalent degree in Electronics and Communication Engineering is also listed in the notice.

Desired Skills

• Subject knowledge: Semiconductor Physics, Semiconductor Device Modeling, Advanced MOS devices, and device/sensor fabrication.
• Tools: Hands-on TCAD tools are desired.
• Programming: MATLAB or Python experience is highly desirable.

Project and Work Area

• Sponsoring agency: Anusandhan National Research Foundation (ANRF), Inclusivity Research Grant (IRG).
• Project duration: The JRF position is linked to a 3-year research project.
• Research area: The work focuses on 2D-material Resistive Random Access Memory (RRAM) for synaptic and sensor applications.
• Career benefit: The selected candidate can register for a Ph.D. degree at NIT Warangal as per institute rules, but must apply when the Ph.D. advertisement is released.

Age Limit

• Maximum age: 30 years.
• Age relaxation: Upper age is relaxable by up to 5 years for SC/ST/OBC, women, and persons with disabilities.

Salary

• NET/GATE qualified candidates: Rs. 37,000 + HRA per month for 1st and 2nd year.
• NET/GATE qualified candidates after SRF upgradation: Rs. 42,000 + HRA per month in 3rd year, after successful assessment.
• Without NET/GATE: Rs. 30,000 + HRA per month for 1st and 2nd year.
• Without NET/GATE after SRF upgradation: Rs. 33,000 + HRA per month in 3rd year, after successful assessment.
• Accommodation: HRA is as per institute rules. On-campus hostel and mess may be available, subject to availability.

Selection Process (Interview)

The notice states that shortlisted candidates will have to attend an interview.

1. Application Screening: NIT Warangal will screen applications, CV, and certificates submitted in one PDF file.
2. Interview: Shortlisted candidates must attend an interview in online or offline mode.
3. No TA/DA: No travel allowance or daily allowance will be paid for attending the interview.
4. Final Selection: Selection will be based on eligibility, research fit, and interview performance.

How to Apply

1. Complete the JRF application proforma attached with the official advertisement.
2. Prepare a one-page Bio-data/CV.
3. Scan your certificates and combine the application, CV, and certificates into one PDF file.
4. Submit the application through the Google Form link mentioned in the official notice.
5. For queries, contact Prof. Vadthiya Narendar, Assistant Professor, Department of Electronics and Communication Engineering, NIT Warangal.
6. Use the contact email narendarv@nitw.ac.in only for clarification, not as a substitute for the official application process.

Before submission: Check that your PDF has the filled application proforma, one-page CV, degree certificates, marks/CGPA proof, NET/GATE proof if applicable, and category certificate if applicable. The notice also says No TA/DA will be paid for attending the interview, so plan accordingly if the interview is offline.

Project fit matters: The notice highlights semiconductor devices, TCAD, fabrication, characterization, MATLAB, and Python, so mention relevant coursework, projects, publications, or experience clearly in your CV.

Important Dates

• Notification Date: 15 June 2026
• Online Application Start: 15 June 2026
• Last Date to Apply Online: 10 July 2026, 11:59 pm
• Interview Date: To be announced

• Work on RRAM device design and fabrication for synaptic and sensor applications
• Support experiments related to 2D-material memory devices and semiconductor systems
• Use simulation or programming tools such as TCAD, MATLAB, or Python when required
• Maintain research data, lab notes, and technical reports for the project
• Assist the principal investigator during experiments, reviews, and project reporting
• Prepare research outputs, presentations, and publications linked to the ANRF project